VISHAY SIHG73N60E-GE3 Power MOSFET, N Channel, 73 A, 650 V, 0.032 ohm, 10 V, 2 V SKB 1SKB19-R1208 copper body/front point

Name: VISHAY SIHG73N60E-GE3 Power MOSFET, N Channel, 73 A, 650 V, 0.032 ohm, 10 V, 2 V SKB 1SKB19-R1208 copper body/front point
Brand: unitourist.vn
SKU: 4970040804
Price: 1053.25 USD
Availability: InStock
Rating: 4.0036 (11 reviews)

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SKU 4970040804

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Ships within 48 hours · Estimated delivery Sep 12 - Sep 17

Layer notes

Lacquer sheets stacked — description and returns below the cascade board.

Description

copper body/front point

Brand HELLERMANNTYTON Part Number REL140-BLACK(100 PACK) Quantity Pack of 100 Technical Data Sheet EN

1/4" Mono Unbalanced Handset 1/4" Phone Isolation Not specified by manufacturer Phone Line Connects to wireless Phone inputs via 1/4" jack Impedance Inputs

2-Leaf Design

9 kg) Packaging Info Box Dimensions (LxWxH) 14

VISHAY SIHG73N60E-GE3 Power MOSFET, N Channel, 73 A, 650 V, 0.032 ohm, 10 V, 2 V SKB 1SKB19-R1208 copper body/front pointThe SIHG73N60E GE3 is a 650V N channel MOSFET with super junction technology to minimize on resistance and withstand high energy pulse. This E series MOSFET features low input capacitance, reduced switching and conduction losses and simple gate drive circuitry. It is designed for soft switching topologies. Suitable for server and telecom power supply applications. 100% Avalanche rated Low figure of merit Ron X Qg Ultra low gate charge Applications

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